Datenblatt-Suchmaschine für elektronische Bauteile |
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TDA5145TS Datenblatt(PDF) 6 Page - NXP Semiconductors |
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TDA5145TS Datenblatt(HTML) 6 Page - NXP Semiconductors |
6 / 20 page 1998 Oct 27 6 Philips Semiconductors Product specification Brushless DC motor drive circuit TDA5145TS CHARACTERISTICS VP = 14.5 V; Tamb =25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supply VP supply voltage note 1 4 − 18 V IP supply current note 2 − 6.8 7.8 mA Vi(VMOT) input voltage to the output driver stages see Fig.1 1.7 − 16 V Thermal protection TSD local temperature at temperature sensor causing shut-down 130 140 150 °C ∆T reduction in temperature before switch-on after shut-down − TSD − 30 − K MOT0; centre tap Vi input voltage −0.5 − VVMOT V Ibias input bias current 0.5 V < Vi <VVMOT − 1.5 V −10 −−µA VCSW comparator switching level note 3 ±20 ±25 ±30 mV ∆VCSW variation in comparator switching levels −− 3mV Vhys comparator input hysteresis − 75 −µV MOT1, MOT2 and MOT3; see Fig.4 VDO drop-out output voltage Io = 100 mA − 0.9 1.05 V Io = 1000 mA − 1.6 1.85 V ∆V sat(lt) variation in saturation voltage between lower transistors Io = 100 mA −− 180 mV ∆Vsat(ut) variation in saturation voltage between upper transistors Io = −100 mA −− 180 mV ILIM current limiting VVMOT =10V; Ro = 1.2 Ω 1.8 2.0 2.5 A tr rise time switching output VVMOT = 15 V; see Fig.5 5 10 15 µs tf fall time switching output VVMOT = 15 V; see Fig.5 10 15 20 µs VdF(DH) diode forward voltage (diode DH)Io = −500 mA; notes 4 and 5; see Fig.1 −− 1.5 V VdF(DL) diode forward voltage (diode DL)Io = 500 mA; notes 4 and 5; see Fig.1 −1.5 −− V IdM peak diode current note 5 −− 2.5 A DIR VIH HIGH-level input voltage 4V<VP < 18 V 2.0 −− V VIL LOW-level input voltage 4V<VP <18V −− 0.8 V IIL LOW-level input current −−20 −µA IIH HIGH-level input current − 20 −µA |
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