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TDA5360 Datenblatt(PDF) 4 Page - NXP Semiconductors

Teilenummer TDA5360
Bauteilbeschribung  Pre-Amplifier for Hard Disk Drive with MR-Read / Inductive Write Heads
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TDA5360 Datenblatt(HTML) 4 Page - NXP Semiconductors

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1998 July 30
Philips Semiconductors
Objective Specification, Revision 2.2
Pre-Amplifier for Hard Disk Drive with
MR-Read / Inductive Write Heads
TDA5360
4
3
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCC
DC Supply voltage
+4.5
+5
+5.5
V
VEE
-4.5
-5
-5.5
V
NF
Noise Figure
Note 3, Section 14
1.7
1.7
dB
IRNV
Input Referred Noise
Voltage
Rmr=66
Ω; Imr=8mA;
10 MHz<f<100 MHz
0.8
nV/
sqrtHz
Avd
Differential gain
VIN=1mVpp @ 20 MHz,
RLoaddif=330Ω, Imr=8mA,
Rmr=66
Ω,
GAIN0=0, GAIN1=1;
50
dB
fHR
-3dB frequency bandwidth
Rmr=66
Ω, Lmr=30 nH
-3dB: without Boost
SAL
GMR
225
225
MHz
MHz
CMR
Common Mode Rejection
Imr=8 mA, Rmr=66
Ω,
10MHz<f<200MHz
1 MHz<f< 10 MHz
f<100 kHz, 1mV input signal
20
40
60
dB
dB
dB
PSR
Power Supply Rejection
200mVpp on Vcc or Vee,
Imr=8mA, Rmr=66
Ω,
10MHz<f<200MHz
1 MHz<f<10 MHz
f< 100 kHz
20
40
60
dB
dB
dB
tr, tf
Write Current Rise/Fall times
(-0.8 * Iwr => +0.8 * Iwr)
Iwr=50 mA; f=20 MHz;
LH=75nH, RH=10Ω
0.84
ns
IMR(PR)
Programming MR bias
current range
SAL
GMR (see note section 10)
4
3
10.2
6 .1
mA
mA
IWR(b-p)
Programming Write current
range (base-to-peak)
Rext
= 10 kΩ
10
50.3
mA
fsclk
Serial interface clock rate
40
MHz


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