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TDA8040T Datenblatt(PDF) 7 Page - NXP Semiconductors |
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TDA8040T Datenblatt(HTML) 7 Page - NXP Semiconductors |
7 / 16 page 1996 Oct 08 7 Philips Semiconductors Objective specification Quadrature demodulator TDA8040T Notes to the characteristics 1. Typical supply currents are defined for VCC =5V. 2. The I and Q channel output voltages are measured with the following conditions: a) fi(RF) = 1⁄2fi(VCO) + 500 kHz (70.5 MHz) b) the higher frequencies (140.5 MHz) are filtered out. 3. The I and Q channels gain is defined by . The gains are measured with the conditions defined in note 2. Voltage controlled oscillator (VCO) fiVCO(min) minimum input oscillator frequency −− 21.4 MHz fiVCO(max) maximum input oscillator frequency 300 −− MHz ∆f frequency deviation − 6 − MHz ∆f drift frequency drift note 8 −− 100 kHz ∆fshift frequency shift ∆VCC =5% −− 100 kHz CNRosc oscillator carrier-to-noise ratio at 10 kHz; note 9 − 85 − dBc/Hz at 100 kHz; note 9 − 105 − dBc/Hz Vosc(p-p) required voltage drive level for external oscillator injection (peak-to-peak value) 100 −− mV Rsource(osc) source resistance for external oscillator generator −− 50 Ω I and Q amplifiers VilQ(p-p) I and Q channel input voltage (peak-to-peak value) note 10 − 0.1 − V VolQ(p-p) I and Q channel output voltage (peak-to-peak value) note 10 − 0.5 − V at 1 dB gain compression; note 10 1.0 −− V IM3 intermodulation distortion in the I and Q channels note 11 40 −− dB BIQ bandwidth of I and Q amplifiers at 0.5 dB 25 −− MHz α ct(IQ) crosstalk between the I and Q channels note 12 30 −− dB VO(IQ) DC output voltage level for the I and Q amplifier − 2.45 − V ZI(IQ) input impedance of the I and Q channels − 10 − k Ω ZO(IQ) output impedance of the I and Q channels − 50 −Ω SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT G IQ V IQ rms () V iRF rms () ------------------------- = |
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