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TC1014-3.3VCT713 Datenblatt(PDF) 2 Page - Microchip Technology

Teilenummer TC1014-3.3VCT713
Bauteilbeschribung  50 mA, 100 mA and 150 mA CMOS LDOs with Shutdown and Reference Bypass
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Direct Link  http://www.microchip.com
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TC1014-3.3VCT713 Datenblatt(HTML) 2 Page - Microchip Technology

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TC1014/TC1015/TC1185
DS21335E-page 2
© 2007 Microchip Technology Inc.
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings†
Input Voltage .........................................................6.5V
Output Voltage........................... (-0.3V) to (VIN + 0.3V)
Power Dissipation................Internally Limited (Note 7)
Maximum Voltage on Any Pin ........VIN +0.3V to -0.3V
Operating Temperature Range...... -40°C < TJ < 125°C
Storage Temperature..........................-65°C to +150°C
† Notice: Stresses above those listed under "Absolute
Maximum Ratings" may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC1014/TC1015/TC1185 ELECTRICAL SPECIFICATIONS
Electrical Specifications: VIN = VR + 1V, IL = 100 µA, CL = 1.0 µF, SHDN > VIH, TA = +25°C, unless otherwise noted.
Boldface type specifications apply for junction temperatures of -40°C to +125°C.
Parameter
Symbol
Min
Typ
Max
Units
Device
Test Conditions
Input Operating Voltage
VIN
2.7
6.0
V—
Note 1
Maximum Output Current
IOUTMAX
50
100
150
mA
TC1014
TC1015
TC1185
Output Voltage
VOUT
VR – 2.5% VR ±0.5% VR + 2.5%
V—
Note 2
VOUT Temperature Coefficient
TCVOUT
20
40
ppm/°C
Note 3
Line Regulation
ΔVOUT/
ΔVIN
—0.05
0c.35
%—
(VR + 1V) ≤ VIN ≤ 6V
Load Regulation
ΔVOUT/
VOUT
0.5
0.5
2
3
%
TC1014; TC1015
TC1185
IL = 0.1 mA to IOUTMAX
IL = 0.1 mA to IOUTMAX
(Note 4)
Dropout Voltage
VIN-VOUT
2
65
85
180
270
120
250
400
mV
TC1015; TC1185
TC1185
IL = 100 µA
IL = 20 mA
IL = 50 mA
IL = 100 mA
IL = 150 mA (Note 5)
Supply Current (Note 8)
IIN
—50
80
µA
SHDN = VIH, IL = 0
Shutdown Supply Current
IINSD
0.05
0.5
µA
SHDN = 0V
Power Supply Rejection
Ratio
PSRR
—64
dB
FRE ≤ 1kHz
Output Short Circuit Current
IOUTSC
—300
450
mA
VOUT = 0V
Thermal Regulation
ΔVOUT/
ΔPD
—0.04
V/W
Notes 6, 7
Thermal Shutdown Die
Temperature
TSD
—160
°C
Thermal Shutdown
Hysteresis
ΔTSD
—10
°C
Note
1:
The minimum VIN has to meet two conditions: VIN ≥ 2.7V and VIN ≥ VR + VDROPOUT.
2:
VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.6V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
3:
4:
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
5:
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V
differential.
6:
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load
or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.
7:
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to
initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations” for more details.
8:
Apply for Junction Temperatures of -40°C to +85°C.
TC VOUT = (VOUTMAX – VOUTMIN)x 106
VOUT x ΔT


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