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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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TS616IDWT Datenblatt(PDF) 8 Page - STMicroelectronics |
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TS616IDWT Datenblatt(HTML) 8 Page - STMicroelectronics |
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8 / 36 page  Electrical characteristics TS616 8/36 Noise and distorsion eN Equivalent input noise voltage F = 100kHz 2.5 nV/ √Hz iNp Equivalent input noise current (+) F = 100kHz 15 pA/ √Hz iNn Equivalent input noise current (-) F = 100kHz 21 pA/ √Hz HD2 2nd harmonic distortion (differential configuration) Vout = 6Vp-p, AV = 12 dB F= 110kHz, RL = 20 Ω diff. -97 dBc HD3 3rd harmonic distortion (differential configuration) Vout = 6Vp-p, AV = 12dB F= 110 kHz, RL = 20Ω diff. -98 dBc IM2 2nd order intermodulation product (differential configuration) F1= 100 kHz, F2 = 110 kHz Vout = 6 Vp-p, AV = 12dB RL = 20Ω diff. -86 dBc F1= 370kHz, F2 = 400kHz Vout = 6Vp-p, AV = 12dB RL = 20Ω diff. -88 IM3 3rd order intermodulation product (differential configuration) F1 = 100kHz, F2 = 110kHz Vout = 6Vp-p, AV = 12dB RL = 20Ω diff. -90 dBc F1 = 370kHz, F2 = 400kHz Vout = 6Vp-p, AV = 12dB RL = 20Ω diff. -85 Table 4. VCC = ±2.5 V, Rfb= 910 Ω, Tamb = 25° C (unless otherwise specified) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
Ähnliche Teilenummer - TS616IDWT |
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Ähnliche Beschreibung - TS616IDWT |
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