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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRLMS1503 Datenblatt(PDF) 6 Page - International Rectifier |
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IRLMS1503 Datenblatt(HTML) 6 Page - International Rectifier |
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6 / 8 page  IRLMS1503PbF 6 www.irf.com P.W. Period di/dt Diode Recovery dv/dt Ripple ≤ 5% Body Diode Forward Drop Re-Applied Voltage Reverse Recovery Current Body Diode Forward Current VGS=10V VDD ISD Driver Gate Drive D.U.T. ISD Waveform D.U.T. VDS Waveform Inductor Curent D = P.W. Period + - + + + - - - * VGS = 5V for Logic Level Devices Peak Diode Recovery dv/dt Test Circuit RG VDD • dv/dt controlled by RG • Driver same type as D.U.T. • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer * Fig 13. For N-channel HEXFET® power MOSFET s |
Ähnliche Teilenummer - IRLMS1503 |
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Ähnliche Beschreibung - IRLMS1503 |
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