GSS4953BDY datasheet(3/5 Pages) GTM

Teilenummer	GSS4953BDY

Bauteilbeschribung	P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Download	5 Pages

Scroll/Zoom	100%

Hersteller	GTM [GTM CORPORATION]

Direct Link	http://www.gtm.com.tw

Logo

3 / 5 page

GSS4953BDY

Page: 3/5

ISSUED DATE :2006/07/14

REVISED DATE :

Characteristics Curve

Fig 5. Breakdown Voltage

v.s. Junction Temperature

Fig 6. Body Diode Forward Voltage

v.s. Source Current

Fig 1. Typical Output Characteristics

Fig 2. Transfer Characteristics

Fig 3. Transconductance v.s.

Drain Current

Fig 4. On-Resistance v.s.

Junction Temperature

V GS = - 10 V

I D = - 5.0 A

Ähnliche Beschreibung - GSS4953BDY

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
GTM CORPORATION	G3401	308Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GP4953	301Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GM162	365Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G2U4407	298Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G3J14	377Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	G1333	352Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GJ9585	236Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GI20P02	245Kb / 5P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GI405	253Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GSS4913	290Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
	GSS4955	350Kb / 4P	P-CHANNEL ENHANCEMENT MODE POWER MOSFET