1997 Mar 26

10

Philips Semiconductors

Product specification

Low voltage versatile telephone

transmission circuits with dialler interface

TEA1112; TEA1112A

Fig.11 Equivalent circuit of an anti-sidetone network in a Wheatstone bridge configuration.

handbook, full pagewidth

MBE786

Im

Zir

IR

Zbal

Rast1

SLPE

RSLPE

VEE

Zline

RCC

LN

RA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

positive continuous line voltage

12

V

repetitive line voltage during switch-on or

line interruption

13.2

V

V

maximum voltage on all other pins

line current

Figs 12 and 13

−

140

mA

total power dissipation

see Figs 12 and 13

TEA1112; TEA1112A

−

625

mW

TEA1112T; TEA1112AT

−

416

mW

IC storage temperature

−40

+125

°C

operating ambient temperature

−25

+75

°C

SYMBOL

PARAMETER

VALUE

UNIT

thermal resistance from junction to ambient in free air (TEA1112; TEA1112A)

80

K/W

thermal resistance from junction to ambient in free air mounted on epoxy board

40.1

× 19.1 × 1.5 mm (TEA1112T; TEA1112AT)

130

K/W