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TEA1204 Datenblatt(PDF) 9 Page - NXP Semiconductors

Teilenummer TEA1204
Bauteilbeschribung  High efficiency DC/DC converter
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Hersteller  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

TEA1204 Datenblatt(HTML) 9 Page - NXP Semiconductors

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1998 Mar 02
9
Philips Semiconductors
Product specification
High efficiency DC/DC converter
TEA1204T
Notes
1. The average inductor current during current limit also depends on inductance value and resistive losses in all
components in the power path. In normal applications, the average current will be limited to 2.3 A (typ.), with limits
scaled down to minimum 2.07 A and maximum 2.53 A.
2. V3 is the voltage at pin 3 (UPOUT/DNIN).
3. If the applied high level is less than V3 − 1 V, the quiescent current level of the device will increase. The maximum
increase is 300
µA in the event that pin 2 is at 2.0 V.
Current levels
Iq
quiescent current at pin 3
up mode
50
60
70
µA
ISHDWN
shut-down current
210
µA
IlimN
current limit NFET
up mode; note 1
2.38
2.80
3.20
A
IlimP
current limit PFET
down mode; note 1
2.05
2.40
2.75
A
ILX(max)
maximum continuous current
at pin 5
−−
1.0
A
Power MOSFETS
RdsON(N)
pin-to-pin resistance NFET
0.08
0.12
0.20
RdsON(P)
pin-to-pin resistance PFET
0.10
0.16
0.25
Timing
fsw
switching frequency
150
200
240
kHz
tres
response time from standby to
Pmax
25
−µs
Temperature
Tamb
operating ambient temperature
−20
+25
+80
°C
Tmax
internal cut-off temperature
150
165
180
°C
Digital levels
VlL
LOW-level input voltage pins
1, 2, 7 and 8
0
0.4
V
VIH
HIGH-level input voltage pin 1
note 2
V3 − 0.4 −
V3 + 0.3 V
VIH
HIGH-level input voltage pin 2
notes 2 and 3
2.0
V3 + 0.3 V
VIH
HIGH-level input voltage
pins 7 and 8
notes 2 and 3
2.9
V3 + 0.3 V
Sense pin resistance
RSENSE
SENSE pin resistance to GND
up or down to 3.3 V mode
437.2
546.5
655.8
k
down to 3.6 V mode
476.8
596.0
715.2
k
up to 5.0 V mode
662.2
827.8
993.4
k
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT


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