Datenblatt-Suchmaschine für elektronische Bauteile |
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TEA6323T Datenblatt(PDF) 8 Page - NXP Semiconductors |
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TEA6323T Datenblatt(HTML) 8 Page - NXP Semiconductors |
8 / 36 page 1995 Dec 20 8 Philips Semiconductors Preliminary specification Sound fader control circuit TEA6323T (S+N)/N signal-plus-noise to noise ratio unweighted; 20 Hz to 20 kHz (RMS); Vo = 2.0 V; see Figs 6 and 7 − 105 − dB CCIR468-2 weighted; quasi peak; Vo = 2.0 V Gv =0dB − 95 − dB Gv =12dB − 88 − dB Gv =20dB − 81 − dB differential input Gv =0dB − 90 − dB Gv =20dB − 79 − dB CMRR common mode rejection ratio differential stereo input 43 53 − dB Pno(rms) noise output power (RMS value) only contribution of TEA6323T; power amplifier for 6 W mute position; note 1 −− 10 nW α ct crosstalk between bus inputs and signal outputs note 2 − 110 − dB Source selector Zi input impedance 25 35 45 k Ω αS input isolation of one selected source to any other input f=1kHz − 105 − dB f = 12.5 kHz − 95 − dB Vi(rms) maximum input voltage (RMS value) THD < 0.5%; VCC = 8.5 V − 2.15 − V THD < 0.5%; V CC = 7.5 V − 1.8 − V Voffset DC offset voltage at source selector output by selection of any stereo inputs −− 10 mV by selection of differential input or mono input −− 20 mV Zo output impedance − 80 120 Ω RL output load resistance 10 −− k Ω CL output load capacity 0 − 2500 pF Gv voltage gain, source selector − 0 − dB Control part (source selector disconnected; source resistance 600 Ω) Zi input impedance volume input 100 150 200 k Ω input impedance loudness input 25 33 40 k Ω Zo output impedance − 80 120 Ω RL output load resistance 2 −− k Ω CL output load capacity 0 − 10 nF SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT 20 V bus p p – () V o rms () --------------------------- log |
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