1997 Mar 07

5

Philips Semiconductors

Product specification

synthesizer

TSA5518M

Table 1

Write data format

Table 2

Explanation of Table 1

BYTE

DESCRIPTION

MS

B

LSB

ACKNOWLEDGE

1

address

11000

MA1 MA0 0

LOW from device

2

programmable divider

0

N14 N13 N12 N11

N10

N9

N8

LOW from device

3

programmable divider

N7

N6

N5

N4

N3

N2

N1

N0

LOW from device

4

charge-pump, bandswitch and test bits 1

CP

T1

T0

BSC B1

B0

OS

LOW from device

5

output ports control bits

P7

P6

P5

P4

X

P2

P1

P0

LOW from device

BIT

DESCRIPTION

MA1, MA0

programmable address bits (see Table 7)

N14, .. , N0

programmable divider bits

N = N14

CP

charge pump current

CP =0to50

µA; CP=1to220 µA

T1, T0, OS

T1 = 0, T0 = 0, OS = 0: normal operation

T0 = 1: 3-state charge pump

OS = 1: operational amplifier output is switched off (varicap drive disable)

BSC

bandswitch control bit

BSC = 0: bandswitch output is controlled by B1 and B0 bits according to Table 3

BSC = 1: bandswitch output is controlled by P7, P5 and P4 bits according to Table 4

B1, B0

bandswitch control bits

P6, P2, P1 and P0

P6, P2 .. P0 = 1: open-collector outputs are active

P6, P2 .. P0 = 0: outputs are in high impedance state

P4, P5 and P7

P4, P5 and P7 = 1: outputs are at low level

P4, P5 and P7 = 0: emitter follower outputs are active

X

don’t care

Table 3

BS output control (BSC = 0)

B1

B0

VOLTAGE ON PIN BS

0

0

0.25 V

01

2 V

10

4 V

11

Table 4

BS output control (BSC = 1)

P7

P5

P4

VOLTAGE ON PIN BS

1

1

0

0.25 V

10

1

2 V

01

1

4 V