Datenblatt-Suchmaschine für elektronische Bauteile |
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KMB7D0NP30QA Datenblatt(PDF) 2 Page - KEC(Korea Electronics) |
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KMB7D0NP30QA Datenblatt(HTML) 2 Page - KEC(Korea Electronics) |
2 / 9 page 2007. 6. 28 2/9 KMB7D0NP30QA Revision No : 2 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V, N-Ch 30 - - V ID=-250 A, VGS=0V, P-Ch -30 - - Drain Cut-off Current IDSS VGS=0V, VDS=24V N-Ch - - 1 A VGS=0V, VDS=-24V P-Ch - - -1 Gate Leakage Current IGSS VGS= 22V, VDS=0V N-Ch - - 100 nA P-Ch - - 100 Gate Threshold Voltage Vth VDS=VGS, ID=250 A N-Ch 1.0 - 3 V VDS=VGS, ID=-250 A P-Ch -1.0 - -3 Drain-Source ON Resistance RDS(ON)* VGS=10V, ID=7A N-Ch - 18 23.5 m VGS=-10V, ID=-5A P-Ch - 35 45.5 VGS=4.5V, ID=6A N-Ch - 30 39 VGS=-4.5V, ID=-4A P-Ch - 62 80 ON State Drain Current ID(ON)* VGS=4.5V, VDS=5V N-Ch 20 - - A VGS=-10V, VDS=-5V P-Ch -20 - - Forward Transconductance gfs* VDS=5V, ID=6.6A N-Ch - 10 - S VDS=-5V, ID=-5A P-Ch - 9 - Source-Drain Diode Forward Voltage VSD* IS=1.7A, VGS=0V N-Ch - 0.7 1.2 V IS=-1.7A, VGS=0V P-Ch - -0.8 -1.2 |
Ähnliche Teilenummer - KMB7D0NP30QA |
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Ähnliche Beschreibung - KMB7D0NP30QA |
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