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ECH8612 Datenblatt(PDF) 2 Page - Sanyo Semicon Device |
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ECH8612 Datenblatt(HTML) 2 Page - Sanyo Semicon Device |
2 / 4 page ECH8612 No.8258-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Turn-ON Delay Time td(on) See specified Test Circuit. 14 ns Rise Time tr See specified Test Circuit. 170 ns Turn-OFF Delay Time td(off) See specified Test Circuit. 100 ns Fall Time tf See specified Test Circuit. 98 ns Total Gate Charge Qg VDS=10V, VGS=4.5V, ID=7A 12 nC Gate-to-Source Charge Qgs VDS=10V, VGS=4.5V, ID=7A 1.3 nC Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4.5V, ID=7A 3.7 nC Diode Forward Voltage VSD IS=7A, VGS=0V 0.83 1.2 V Package Dimensions Electrical Connection unit : mm 7011A-001 Switching Time Test Circuit PW=10 µs D.C. ≤1% P.G 50 Ω G S D ID=3.5A RL=2.86Ω VDD=10V VOUT ECH8612 VIN 4.5V 0V VIN 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 1 4 85 0.15 0 to 0.02 0.65 2.9 0.3 Top View Bottom View 876 5 123 4 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 Top view |
Ähnliche Teilenummer - ECH8612 |
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Ähnliche Beschreibung - ECH8612 |
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