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ECH8612 Datenblatt(PDF) 2 Page - Sanyo Semicon Device

Teilenummer ECH8612
Bauteilbeschribung  N-Channel Silicon MOSFET General-Purpose Switching Device
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ECH8612 Datenblatt(HTML) 2 Page - Sanyo Semicon Device

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ECH8612
No.8258-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
14
ns
Rise Time
tr
See specified Test Circuit.
170
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
100
ns
Fall Time
tf
See specified Test Circuit.
98
ns
Total Gate Charge
Qg
VDS=10V, VGS=4.5V, ID=7A
12
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=4.5V, ID=7A
1.3
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4.5V, ID=7A
3.7
nC
Diode Forward Voltage
VSD
IS=7A, VGS=0V
0.83
1.2
V
Package Dimensions
Electrical Connection
unit : mm
7011A-001
Switching Time Test Circuit
PW=10
µs
D.C.
≤1%
P.G
50
G
S
D
ID=3.5A
RL=2.86Ω
VDD=10V
VOUT
ECH8612
VIN
4.5V
0V
VIN
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
SANYO : ECH8
1
4
85
0.15
0 to 0.02
0.65
2.9
0.3
Top View
Bottom View
876
5
123
4
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
Top view


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