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ECH8612 Datenblatt(PDF) 4 Page - Sanyo Semicon Device

Teilenummer ECH8612
Bauteilbeschribung  N-Channel Silicon MOSFET General-Purpose Switching Device
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

ECH8612 Datenblatt(HTML) 4 Page - Sanyo Semicon Device

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ECH8612
No.8258-4/4
PS
Ambient Temperature, Ta --
°C
PD -- Ta
A S O
Drain-to-Source Voltage, VDS -- V
Total Gate Charge, Qg -- nC
VGS -- Qg
IT09390
2
3
5
7
2
3
5
7
2
3
5
7
1.0
10
2
3
5
7
100
0.1
0.01
0.1
0.01
57
23
2
1.0
57
3
10
57
23
2 3
Operation in this
area is limited by RDS(on).
IDP=40A
ID=7A
100ms
DC
operation
10ms
<10µs
1ms
0
0
20
40
0.4
60
80
100
120
140
160
IT09391
0.8
1.2
1.6
0.2
0.6
1.0
1.4
1.5
1.3
0
0
12
2
4.5
4.0
IT09389
468
10
3.5
3.0
2.5
2.0
1.5
1.0
0.5
VDS=10V
ID=7A
Ta=25
°C
Single pulse
Mounted on a ceramic board (900mm2!0.8mm) 1unit
1unit
Mounted on a ceramic board (900mm2!0.8mm)
Note on usage : Since the ECH8612 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic
or mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate
and reliable, but no guarantees are made or implied regarding its use or any infringements of
intellectual property rights or other rights of third parties.
This catalog provides information as of May, 2006. Specifications and information herein are subject
to change without notice.


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