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2SJ660 Datenblatt(PDF) 2 Page - Sanyo Semicon Device

Teilenummer 2SJ660
Bauteilbeschribung  P-Channel Silicon MOSFET General-Purpose Switching Device
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SJ660 Datenblatt(HTML) 2 Page - Sanyo Semicon Device

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2SJ660
No.8585-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=--20V, f=1MHz
2200
pF
Output Capacitance
Coss
VDS=--20V, f=1MHz
220
pF
Reverse Transfer Capacitance
Crss
VDS=--20V, f=1MHz
165
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
18
ns
Rise Time
tr
See specified Test Circuit.
150
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
180
ns
Fall Time
tf
See specified Test Circuit.
130
ns
Total Gate Charge
Qg
VDS=--30V, VGS=--10V, ID=--26A
45
nC
Gate-to-Source Charge
Qgs
VDS=--30V, VGS=--10V, ID=--26A
7.4
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--30V, VGS=--10V, ID=--26A
9
nC
Diode Forward Voltage
VSD
IS=--26A, VGS=0V
--0.98
--1.2
V
Package Dimensions
Package Dimensions
unit : mm
unit : mm
7513-002
7001-003
Switching Time Test Circuit
Avalanche Resistance Test Circuit
10.2
1.3
4.5
0.8
0.4
12
3
2.55
2.55
1.2
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
PW=10
µs
D.C.
≤1%
P.G
50
Ω
G
S
D
ID= --13A
RL=2.3Ω
VDD= --30V
VOUT
2SJ660
VIN
0V
--10V
VIN
50
Ω
0V
--10V
≥50Ω
RG
DUT
VDD
L
10.2
1.3
4.5
0.8
0.4
1.2
2.55
2.55
0 to 0.3
12
3
2.55
2.55
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD


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