2SC6097 datasheet(2/4 Pages) SANYO

Teilenummer	2SC6097

Bauteilbeschribung	NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications

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Hersteller	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2 / 4 page

2SC6097

No. A0412-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Gain-Bandwidth Product

fT

VCE=10V, IC=500mA

390

MHz

Output Capacitance

Cob

VCB=10V, f=1MHz

18

pF

Collector-to-Emitter Saturation Voltage

VCE(sat)1

IC=1A, IB=50mA

100

150

mV

VCE(sat)2

IC=1A, IB=100mA

90

135

mV

Base-to-Emitter Saturation Voltage

VBE(sat)

IC=1A, IB=100mA

0.84

1.2

V

Collector-to-Base Breakdown Voltage

V(BR)CBO

IC=10µA, IE=0A

100

V

Collector-to-Emitter Breakdown Voltage

V(BR)CES

IC=100µA, RBE=0Ω

100

V

Collector-to-Emitter Breakdown Voltage

V(BR)CEO

IC=1mA, RBE=∞

60

V

Emitter-to-Base Breakdown Voltage

V(BR)EBO

IE=10µA, IC=0A

6.5

V

Turn-ON Time

ton

See specified Test Circuit.

35

ns

Storage Time

tstg

See specified Test Circuit.

680

ns

Fall Time

tf

See specified Test Circuit.

24

ns

Package Dimensions

unit : mm

7518-003

7003-003

Switching Time Test Circuit

VR10

RB

VCC=30V

10IB1= --10IB2=IC=0.5A

VBE= --5V

++

50

Ω

INPUT

OUTPUT

RL

470

µF

100

µF

PW=20

µs

IB1

D.C.

≤1%

IB2

6.5

5.0

2.3

0.5

12

4

3

0.85

0.7

1.2

0.6

0.5

2.3

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP

6.5

5.0

2.3

0.5

12

4

3

0.85

0.6

0.5

1.2

2.3

0 to 0.2

1 : Base

2 : Collector

3 : Emitter

4 : Collector

SANYO : TP-FA

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