3HP04MH datasheet(2/4 Pages) SANYO

Teilenummer	3HP04MH

Bauteilbeschribung	P-Channel Silicon MOSFET General-Purpose Switching Device Applications

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Hersteller	SANYO [Sanyo Semicon Device]

Direct Link	https://www.sanyo-av.com/us/

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2 / 4 page

3HP04MH

No. A0445-2/4

Continued from preceding page.

Ratings

Parameter

Symbol

Conditions

min

typ

max

Unit

Total Gate Charge

Qg

VDS=--10V, VGS=--10V, ID=--200mA

1.6

nC

Gate-to-Source Charge

Qgs

VDS=--10V, VGS=--10V, ID=--200mA

0.5

nC

Gate-to-Drain “Miller” Charge

Qgd

VDS=--10V, VGS=--10V, ID=--200mA

0.1

nC

Diode Forward Voltage

VSD

IS=--200mA, VGS=0V

--0.86

--1.2

V

Package Dimensions

Switching Time Test Circuit

unit : mm

7019A-003

1 : Gate

2 : Source

3 : Drain

SANYO : MCPH3

2.0

0.65

0.3

0.15

12

3

0 to 0.02

PW=10

µs

D.C.

≤1%

P.G

50

Ω

G

S

D

ID= --100mA

RL=150Ω

Rg

VDD= --15V

VOUT

3HP04MH

VIN

0V

--10V

VIN

Rg=5k

Ω

ID -- VDS

ID -- VGS

Drain-to-Source Voltage, VDS -- V

Gate-to-Source Voltage, VGS -- V

RDS(on) -- VGS

RDS(on) -- Ta

Gate-to-Source Voltage, VGS -- V

Ambient Temperature, Ta --

°C

--20

--200

--60

--100

--140

--180

--40

--80

--120

--160

0

--40

--20

--120

--80

--160

--60

--140

--100

--180

--200

0

--1.0

--0.8

--0.6

--0.1

--0.2

--0.4

--0.9

--0.7

--0.3

--0.5

IT11209

0

--1.0

--0.5

--2.0

--3.0

--1.5

--2.5

--3.5

--4.0

IT11210

IT11212

0

--2

--4

--6

--8

--16

--10

--12

--14

IT11211

10

0

4

2

1

6

8

5

3

7

9

Ta=25

°C

VGS= --2.0V

VDS= --10V

--60

0

4

5

2

3

1

6

--40

--20

0

20

40

60

80

100

120

140

160

ID=

--50mA,

VGS

= --4V

ID= -

-100mA,

VGS=

--10V

ID= --50mA

--100mA

--2.5V

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