Datenblatt-Suchmaschine für elektronische Bauteile |
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STP14NK60Z Datenblatt(PDF) 6 Page - STMicroelectronics |
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STP14NK60Z Datenblatt(HTML) 6 Page - STMicroelectronics |
6 / 19 page Electrical characteristics STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1- 6/19 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD=300 V, ID=6A, RG=4.7Ω, VGS=10V (see Figure 18) 26 18 ns ns td(off) tf Turn-off delay time Fall time VDD=300V, ID=6A, RG=4.7Ω, VGS=10V (see Figure 18) 62 13 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD=480 V, ID=12A, RG=4.7Ω, VGS=10V (see Figure 20) 12 9.5 22 ns ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD Source-drain current 12 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) 48 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD=12A, VGS=0 1.6 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, di/dt = 100A/µs, VDD=50V 490 4.7 19.3 ns µC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=12A, di/dt = 100A/µs, VDD=50V, Tj=150°C 664 6.8 20.5 ns µC A |
Ähnliche Teilenummer - STP14NK60Z_07 |
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Ähnliche Beschreibung - STP14NK60Z_07 |
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