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CPH5835_07 Datenblatt(Datasheet) 4 Page - Sanyo Semicon Device

Teile-Nr. CPH5835_07
Beschreibung  MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
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Hersteller  SANYO [Sanyo Semicon Device]
Homepage  http://www.ssdc-jp.com/eng/
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 4 page
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CPH5835
No.8207-4/6
0
0
--1
--2
--3
3.5
3
12
--4
VDS= --10V
ID= --1.5A
IT02739
IT08391
IT08390
3
--0.1
35
7
--1.0
23
5
7
2
3
5
100
7
5
3
2
10
7
5
VDD= --10V
VGS= --4V
td(on)
td(off)
t r
tf
IT02737
0
10
--5
100
--10
1000
7
5
3
2
7
5
3
2
--20
--15
f=1MHz
Ciss
Coss
Crss
IT02738
IT02735
--0.01
0.1
--0.1
--1.0
23
5
7
23
5
7
2
3
5
10
1.0
7
5
3
2
7
5
3
2
yfs -- ID
VDS= --10V
75°
C
25°
C
Ta=
--25
°C
IT02736
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.4
--1.2
--0.01
--0.1
--10
--1.0
7
5
3
2
7
5
3
2
7
5
3
2
VGS=0
Drain Current, ID -- A
Diode Forward Voltage, VSD -- V
IF -- VSD
Drain Current, ID -- A
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- VDS
Total Gate Charge, Qg -- nC
VGS -- Qg
A S O
Drain-to-Source Voltage, VDS -- V
Ambient Temperature, Ta --
°C
PD -- Ta
2
3
5
7
2
3
5
7
2
3
5
7
--10
--1.0
--0.1
--0.01
22
35
5
77
23
5 7
23
3
--0.01
--0.1
--1.0
--10
100ms
DC
operation
(T
a=25
°C)
Operation in this
area is limited by RDS(on).
ID= --1.5A
IDP= --6.0A
<10µs
100
µ
s
1ms
10ms
Ta=25
°C
Single pulse
Mounted on a ceramic board (600mm2!0.8mm) 1unit
0
20
40
60
80
100
120
140
160
Mounted
on
a
ceramic
board
(600mm
2!
0.8mm)
1unit
0
0.2
0.4
0.6
0.8
1.0
0.9
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]
[MOSFET]




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