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TF202C Datenblatt(PDF) 2 Page - Sanyo Semicon Device

Teilenummer TF202C
Bauteilbeschribung  N-channel Silicon Junction FET Electret Condenser Microphone Applications
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Hersteller  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

TF202C Datenblatt(HTML) 2 Page - Sanyo Semicon Device

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TF202C
No. A0727-2/5
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Forward Transfer Admittance
yfs
VDS=5V, VGS=0V, f=1kHz
0.5
1.2
mS
Input Capacitance
Ciss
VDS=5V, VGS=0V, f=1MHz
3.5
pF
Reverse Transfer Capacitance
Crss
VDS=5V, VGS=0V, f=1MHz
0.65
pF
[Ta=25˚C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain
GV
VIN=10mV, f=1kHz
--3.0
dB
Reduced Voltage Characteristic
∆GVV
VIN=10mV, f=1kHz, VCC=4.5→1.5V
--1.2
--3.5
dB
Frequency Characteristic
∆Gvf
f=1kHz to 110Hz
--1.0
dB
Input Impedance
ZIN
f=1kHz
25
MΩ
Output Impedance
ZO
f=1kHz
1000
Total Harmonic Distortion
THD
VIN=30mV, f=1kHz
1.0
%
Output Noise Voltage
VNO
VIN=0V, A curve
--110
dB
Package Dimensions
Test Circuit
unit : mm (typ)
7048-001
OSC
15pF
+
33µF
VCC=4.5V
VCC=1.5V
V
1kΩ
A
B
VTVM
THD
Voltage gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
Output Impedance
01
89
10
23
45
67
500
400
300
200
100
0
ID -- VDS
IT02310
VGS=0V
--0.1V
--0.2V
--0.4V
--0.5V
--0.3V
01
23
45
500
400
300
200
100
0
ID -- VDS
IT03015
VGS=0V
--0.1V
--0.2V
--0.4V
--0.5V
--0.3V
Drain-to-Source Voltage, VDS -- V
Drain-to-Source Voltage, VDS -- V
450
350
250
50
150
450
350
250
50
150
1 : Drain
2 : Source
3 : Gate
SANYO : TSSFP
3
1
12
3
2
1.2
0.2
0.11
0 to 0.02
0.4
Top View
Bottom View


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