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1N4749A Datenblatt(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Teilenummer 1N4749A
Bauteilbeschribung  Glass Passivated Junction Silicon Zener Diode
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Hersteller  TSC [Taiwan Semiconductor Company, Ltd]
Direct Link  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

1N4749A Datenblatt(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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- 819 -
ELECTRICAL CHARACTERISTICS (TA=25OC unless otherwise noted) VF=1.2V max, IF=200mA for all types.
Nominal Zener Voltage
Test
Surge Current @
Device
Vz @ Izt
Current
TA = 25
OC
(Note 1)
Voltage
IZT
ZZT @ IZT
Ir - mA
(Notes 2 & 3)
mA
Ohms
Ohms
mA
uA Max
Volts
(Note 5)
1N4741A
11
23
8
700
0.25
5.0
8.4
414
1N4742A
12
21
9
700
0.25
5.0
9.1
380
1N4743A
13
19
10
700
0.25
5.0
9.9
344
1N4744A
15
17
14
700
0.25
5.0
11.4
304
1N4745A
16
15.5
16
700
0.25
5.0
12.2
285
1N4746A
18
14.0
20
750
0.25
5.0
13.7
250
1N4747A
20
12.5
22
750
0.25
5.0
15.2
225
1N4748A
22
11.5
23
750
0.25
5.0
16.7
205
1N4749A
24
10.5
25
750
0.25
5.0
18.2
190
1N4750A
27
9.5
35
750
0.25
5.0
20.6
170
1N4751A
30
8.5
40
1000
0.25
5.0
22.8
150
1N4752A
33
7.5
45
1000
0.25
5.0
25.1
135
1N4753A
36
7.0
50
1000
0.25
5.0
27.4
125
1N4754A
39
6.5
60
1000
0.25
5.0
29.7
115
1N4755A
43
6.0
70
1500
0.25
5.0
32.7
110
1N4756A
47
5.5
80
1500
0.25
5.0
35.8
95
1N4757A
51
5.0
95
1500
0.25
5.0
38.8
90
1N4758A
56
4.5
110
2000
0.25
5.0
42.6
80
1N4759A
62
4.0
125
2000
0.25
5.0
47.1
70
1N4760A
68
3.7
150
2000
0.25
5.0
51.7
65
1N4761A
75
3.3
175
2000
0.25
5.0
56.0
60
1N4762A
82
3.0
200
3000
0.25
5.0
62.2
55
1N4763A
91
2.8
250
3000
0.25
5.0
69.2
50
1N4764A
100
2.5
350
3000
0.25
5.0
76.0
45
1M110Z
110
2.3
450
4000
0.25
5.0
83.6
-
1M120Z
120
2.0
550
4500
0.25
5.0
91.2
-
1M130Z
130
1.9
700
5000
0.25
5.0
98.8
-
1M150Z
150
1.7
1000
6000
0.25
5.0
114.0
-
1M160Z
160
1.6
1100
6500
0.25
5.0
121.6
-
1M180Z
180
1.4
1200
7000
0.25
5.0
136.8
-
1M200Z
200
1.2
1500
8000
0.25
5.0
152.0
-
Maximum Zener Impedance (Note 4)
Leakage Current
ZZK @ IZK
IR @ VR
reverse surge current of 1/2 square wave or equivalent sine wave pulse of 1/120 second duration superimposed on the
5. Surge Current (Ir) Non-Repetitive. The rating listed in the electrical characteristics table is maximum peak, non-repetitive,
test current, IZT, per JEDEC registration; however, actual device capability is as described in Figure 10.
6. Additionnal measurement of Voltage group 9V1 to 75 at 95% Vzmin <35nA at Tj 25°C
the lead temperature (TL) at 30
OC± 1OC, from the diode body.
3. Zener Voltage (VZ) Measurement. Guarantees the zener voltage when messured at 90 seconds while maintaining
4. Zener Impedance (ZZ) Derivation. The zener impedance is derived from the 1000 cycle ac voltage, which results when an ac
current having and rms value equal to 10% of the dc zener current (IZT or IZK) is superimposed on IZT or IZK.
2. Specials Available Include:
A. Nominal zener voltages between the voltages shown and tighter voltage tolerances.
B. Matched sets.
Notes:
zener voltage of ±5%.
1. Tolerance and Type Number Designation. The type numbers listed have a standard tolerance on the nominal


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