Datenblatt-Suchmaschine für elektronische Bauteile |
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STP65NF06 Datenblatt(PDF) 3 Page - STMicroelectronics |
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STP65NF06 Datenblatt(HTML) 3 Page - STMicroelectronics |
3 / 14 page STD65NF06 - STP65NF06 Electrical ratings 3/14 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 60 V VGS Gate- source voltage ± 20 V ID Drain current (continuous) at TC = 25°C 60 A ID Drain current (continuous) at TC = 100°C 42 A IDM (1) 1. Pulse width limited by safe operating area. Drain current (pulsed) 240 A Ptot Total dissipation at TC = 25°C 110 W Derating Factor 0.73 W/°C dv/dt (2) 2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX Peak diode recovery voltage slope 10 V/ns EAS (3) 3. Starting Tj = 25 °C, ID = 30A, VDD = 40V Single pulse avalanche energy 390 mJ Tstg Storage temperature -55 to 175 °C Tj Max. operating junction temperature Table 2. Thermal data Symbol Parameter TO-220 DPAK Unit Rthj-case Thermal resistance junction-case max 1.36 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 -- °C/W Rthj-pcb(1) 1. When mounted on FR-4 of 1 inch², 2 oz Cu Thermal resistance junction-pcb max -- 50 °C/W Tl Maximum lead temperature for soldering purpose (for 10sec. 1.6mm from case) 300 -- °C/W |
Ähnliche Teilenummer - STP65NF06 |
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Ähnliche Beschreibung - STP65NF06 |
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