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STP65NF06 Datenblatt(PDF) 3 Page - STMicroelectronics

Teilenummer STP65NF06
Bauteilbeschribung  N-channel 60V - 11.5m廓 - 60A - DPAK/TO-220 STripFET??II Power MOSFET
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
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STD65NF06 - STP65NF06
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
60
V
VGS
Gate- source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
60
A
ID
Drain current (continuous) at TC = 100°C
42
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
240
A
Ptot
Total dissipation at TC = 25°C
110
W
Derating Factor
0.73
W/°C
dv/dt (2)
2.
ISD ≤60A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
10
V/ns
EAS
(3)
3.
Starting Tj = 25 °C, ID = 30A, VDD = 40V
Single pulse avalanche energy
390
mJ
Tstg
Storage temperature
-55 to 175
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
Symbol
Parameter
TO-220
DPAK
Unit
Rthj-case
Thermal resistance junction-case max
1.36
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
--
°C/W
Rthj-pcb(1)
1.
When mounted on FR-4 of 1 inch², 2 oz Cu
Thermal resistance junction-pcb max
--
50
°C/W
Tl
Maximum lead temperature for soldering
purpose (for 10sec. 1.6mm from case)
300
--
°C/W


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