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STK730P Datenblatt(PDF) 3 Page - AUK corp

Teilenummer STK730P
Bauteilbeschribung  Power MOSFET
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Hersteller  AUK [AUK corp]
Direct Link  https:www.auk.co.kr
Logo AUK - AUK corp

STK730P Datenblatt(HTML) 3 Page - AUK corp

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KSD-T0P008-000
3
STK730P
Electrical Characteristics
(Tc=25
°C)
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Drain-source breakdown voltage
V(BR)DSS
ID=250 , VGS=0
400
-
-
V
Gate threshold voltage
VGS(th)
ID=250 , VGS=5V
2.0
-
4.0
V
Drain-source cut-off current
IDSS
VDS=400V, VGS=0
-
-
10
μA
Gate leakage current
IGSS
VDS=0V, VGS=±30V
-
-
±100
nA
Drain-source on-resistance
RDS(on)
VGS=10V, ID=2.75A
-
0.8
1
Ω
Forward transfer conductance
gfs
VDS=10V, ID=2.75A
-
3.6
-
S
Input capacitance
Ciss
-
550
825
Output capacitance
Coss
-
46
70
Reverse transfer capacitance
Crss
VGS=0V, VDS=25V
f=1 MHz
-
8.4
13
pF
Turn-on delay time
td(on)
-
13
-
Rise time
tr
-
65
-
Turn-off delay time
td(off)
-
21
-
Fall time
tf
VDD=200V, ID=5.5A
RG=12Ω
-
38
-
ns
Total gate charge
Qg
-
16
24
Gate-source charge
Qgs
-
2.5
3.8
Gate-drain charge
Qgd
VDS=200V, VGS=10V
ID=5.5A
-
6.6
10
nC
Source-Drain Diode Ratings and Characteristics
(Tc=25
°C)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
Source current (DC)
IS
-
-
5.5
Source current (Pulsed)
ISP
Integral reverse diode
in the MOSFET
-
-
22
A
Forward voltage
VSD
VGS=0V, IS=5.5A
-
-
1.5
V
Reverse recovery time
trr
-
270
-
ns
Reverse recovery charge
Qrr
Is=5.5A, VGS=0V
dIs/dt=100A/
-
2.16
-
uC
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=13.7mH, I
AS=5.5A, VDD=50V, RG=27Ω
③ Pulse Test : Pulse Width≤ 400 , Duty cycle≤ 2%
④ Essentially independent of operating temperature


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