Datenblatt-Suchmaschine für elektronische Bauteile |
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LK822 Datenblatt(PDF) 1 Page - Polyfet RF Devices |
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LK822 Datenblatt(HTML) 1 Page - Polyfet RF Devices |
1 / 2 page polyfet rf devices LK822 12 Push - Pull AK 48.0 4.0 66.0 1.10 C/W 36 2.0 15.00 2.0 55 0.40 6.00 14.0 140 0.20 36 PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS Common Source Power Gain Drain Efficiency Total Device Dissipation Junction to Case Thermal Resistance Maximum Junction Temperature Storage Temperature DC Drain Current Drain to Source Voltage Gate to Source Voltage -65 C to 150 C 200 C A V Load Mismatch Tolerance VSWR Drain to Gate Voltage 20:1 Relative 1.60 0.20 Ids = mA, Vgs = 0V V, Vgs = 0V Ciss Crss Coss Vds = Idq = A, Vds = V, F = 1.60 Bvdss Idss Drain Breakdown Voltage V mA pF pF pF Common Source Output Capacitance Common Source Feedback Capacitance Idq = Idq = 1.60 400 Vgs = 20V, Ids = Rdson Saturation Resistance Forward Transconductance gM Vds = 10V, Vgs = 5V POLYFET RF DEVICES 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com 400 400 Common Source Input Capacitance 36 V Igss Vgs Idsat Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Saturation Current 1 7 uA V Mho Ohm Amp PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ELECTRICAL CHARACTERISTICS ( EACH SIDE ) RF CHARACTERISTICS ( 40.0 ABSOLUTE MAXIMUM RATINGS ( T = Gps 12.5 A, Vds = V, F = A, Vds = V, F = 12.5 12.5 Watts V 1 MHz MHz MHz Watts Package Style 40.0 Vds = 0V Vgs = 30V Vgs = 20V, Vds = 10V HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE General Description 12.5 Vds = A, Vgs = Vds Ids = A η dB % o o o o o Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency. TM t SILICON GATE ENHANCEMENT MODE RF POWER TRANSISTOR LDMOS Vgs = 0V, F = 1 MHz 12.5 Vds = Vgs = 0V, F = 1 MHz 12.5 Vds = Vgs = 0V, F = 1 MHz 12.5 REVISION 03/08/2001 20 25 C ) WATTS OUTPUT ) |
Ähnliche Teilenummer - LK822 |
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Ähnliche Beschreibung - LK822 |
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