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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7702PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF7702PBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 8 page  Parameter Max. Units VDS Drain- Source Voltage -12 V ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V ±8.0 ID @ TC = 70°C Continuous Drain Current, VGS @ -4.5V ±7.0 A IDM Pulsed Drain Current ±70 PD @TC = 25°C Power Dissipation 1.5 PD @TC = 70°C Power Dissipation 0.96 Linear Derating Factor 0.01 W/°C VGS Gate-to-Source Voltage ± 8.0 V TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C 02/06/06 IRF7702PbF HEXFET® Power MOSFET Parameter Max. Units RθJA Maximum Junction-to-Ambient 83 °C/W Thermal Resistance Description Absolute Maximum Ratings W www.irf.com 1 l Ultra Low On-Resistance l -1.8V Rated l P-Channel MOSFET l Very Small SOIC Package l Low Profile ( < 1.1mm) l Available in Tape & Reel l Lead-Free HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that Inter- national Rectifier is well known for, provides thedesigner with an extremely efficient and reliable device for battery and load management. The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into extremely thin environments such as portable electronics and PCMCIA cards. TSSOP-8 VDSS RDS(on) max ID 0.014@VGS = -4.5V -8.0A -12V 0.019@VGS = -2.5V -7.0A 0.027@VGS = -1.8V -5.8A #Ã2ÃB "Ã2ÃT !Ã2ÃT Ã2Ã9 ! " # B 9 T $ % & ' 'Ã2Ã9 &Ã2ÃT %Ã2ÃT $Ã2Ã9 PD-96027 |
Ähnliche Teilenummer - IRF7702PBF |
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Ähnliche Beschreibung - IRF7702PBF |
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