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IRF7342PBF Datenblatt(PDF) 2 Page - International Rectifier

Teilenummer IRF7342PBF
Bauteilbeschribung  HEXFET짰 Power MOSFET (VDSS = -55V , RDS(on) = 0.105廓)
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Hersteller  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7342PBF Datenblatt(HTML) 2 Page - International Rectifier

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IRF7342PbF
2
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Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
-55
–––
–––
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
––– -0.054 –––
V/°C Reference to 25°C, ID = -1mA
––– 0.095 0.105
VGS = -10V, ID = -3.4A
„
––– 0.150 0.170
VGS = -4.5V, ID = -2.7A
„
VGS(th)
Gate Threshold Voltage
-1.0
–––
–––
V
VDS = VGS, ID = -250µA
gfs
Forward Transconductance
3.3
–––
–––
S
VDS = -10V, ID = -3.1A
––– ––– -2.0
VDS = -55V, VGS = 0V
––– –––
-25
VDS = -55V, VGS = 0V, TJ = 55°C
Gate-to-Source Forward Leakage
–––
––– -100
VGS = -20V
Gate-to-Source Reverse Leakage
–––
–––
100
VGS = 20V
Qg
Total Gate Charge
–––
26
38
ID = -3.1A
Qgs
Gate-to-Source Charge
–––
3.0
4.5
nC
VDS = -44V
Qgd
Gate-to-Drain ("Miller") Charge
–––
8.4
13
VGS = -10V, See Fig. 10
„
td(on)
Turn-On Delay Time
–––
14
22
VDD = -28V
tr
Rise Time
–––
10
15
ID = -1.0A
td(off)
Turn-Off Delay Time
–––
43
64
RG = 6.0Ω
tf
Fall Time
–––
22
32
RD = 16Ω,
„
Ciss
Input Capacitance
––– 690
–––
VGS = 0V
Coss
Output Capacitance
––– 210
–––
pF
VDS = -25V
Crss
Reverse Transfer Capacitance
–––
86
–––
ƒ = 1.0MHz, See Fig. 9
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
IGSS
µA
RDS(on)
StaticDrain-to-SourceOn-Resistance
IDSS
Drain-to-SourceLeakageCurrent
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
integral reverse
(Body Diode)

p-n junction diode.
VSD
Diode Forward Voltage
––– ––– -1.2
V
TJ = 25°C, IS = -2.0A, VGS = 0V
ƒ
trr
Reverse Recovery Time
–––
54
80
ns
TJ = 25°C, IF = -2.0A
Qrr
Reverse RecoveryCharge
–––
85
130
nC
di/dt = -100A/µs
ƒ
Source-Drain Ratings and Characteristics
–––
–––
––– –––
-27
-2.0
A
S
D
G
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ ISD ≤ -3.4A, di/dt ≤ -150A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Notes:
‚ Starting TJ = 25°C, L = 20mH
RG = 25Ω, IAS = -3.4A. (See Figure 8)
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… When mounted on 1 inch square copper board, t<10 sec


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