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TC1550TG-G Datenblatt(PDF) 3 Page - Supertex, Inc

Teilenummer TC1550TG-G
Bauteilbeschribung  N- and P-Channel Enhancement-Mode Dual MOSFET
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Hersteller  SUTEX [Supertex, Inc]
Direct Link  http://www.supertex.com
Logo SUTEX - Supertex, Inc

TC1550TG-G Datenblatt(HTML) 3 Page - Supertex, Inc

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TC1550
N-Channel Electrical Characteristics (cont.)
Symbol
Parameter
Min
Typ
Max
Units
Conditions
C
ISS
Input Capacitance
-
45
55
pF
V
GS = 0V,
V
DS = 25V,
f = 1MHz
C
OSS
Common Source Output Capacitance
-
8.0
10
C
RSS
Reverse Transfer Capacitance
-
2.0
5.0
t
d(ON)
Turn-ON Delay Time
-
-
10
ns
V
DD = 25V,
I
D = 150mA,
R
GEN = 25Ω
t
r
Rise Time
-
-
15
t
d(OFF)
Turn-Off Delay Time
-
-
10
t
f
Fall Time
-
-
10
V
SD
Diode Forward Voltage Drop
-
0.8
-
V
V
GS = 0V, ISD = 500mA
t
rr
Reverse Recovery Time
-
300
-
ns
V
GS = 0V, ISD = 500mA
Symbol
Parameter
Min
Typ
Max
Units
Conditions
BV
DSS
Drain-to-SourceBreakdown Voltage
-500
-
-
V
V
GS = 0V, ID = -1mA
V
GS(th)
Gate Threshold Voltage
-2.0
-
-4.5
V
V
GS = VDS, ID = -1mA
ΔV
GS(th)
Change in VGS(th) with Temperature
-
3.5
6.0
mV/OCV
GS = VDS, ID = -1mA
I
GSS
Gate Body Leakage Current
-
-
100
nA
V
GS = ±20V, VDS = 0V
I
DSS
Zero Gate Voltage Drain Current
--
-10
µA
V
GS = 0V, VDS = Max Rating
--
-1.0
mA
V
DS = 0.8 Max Rating,
V
GS = 0V, TA = 125°C
I
D(ON)
On-State Drain Current
--90
-
mA
V
GS = -5.0V, VDS = -25V
-100
-240
-
V
GS = -10V, VDS = -25V
R
DS(ON)
Static Drain-to-Source
ON-State Resistance
-85-
Ω
V
GS = -5.0V, ID = -5.0mA
-80
125
V
GS = -10V, ID = -10mA
ΔR
DS(ON)
Change in R
DS(ON) with Temperature
-
0.85
-
%/OCV
GS = -10V, ID = -10mA
G
FS
Forward Transconductance
25
40
-
mmho
V
DS = -25V, ID = -10mA
C
ISS
Input Capacitance
-
40
70
pF
V
GS = 0V,
V
DS = -25V,
f = 1MHz
C
OSS
Common Source Output Capacitance
-
10
20
C
RSS
Reverse Transfer Capacitance
-
3.0
10
t
d(ON)
Turn-ON Delay Time
-
5.0
10
ns
V
DD = -25V,
I
D = -100mA,
R
GEN = 25Ω
t
r
Rise Time
-
8.0
10
t
d(OFF)
Turn-Off Delay Time
-
8.0
15
t
f
Fall Time
-
5.0
16
V
SD
Diode Forward Voltage Drop
-
-0.8
-1.5
V
V
GS = 0V, ISD = -100mA
t
rr
Reverse Recovery Time
-
200
-
ns
V
GS = 0V, ISD = -100mA
P-Channel Electrical Characteristics (T
A = 25°C unless otherwise specified)
Notes:
(1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.)
(2) All AC parameters sample tested.


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