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2N4261UB Datenblatt(PDF) 1 Page - Semicoa Semiconductor

Teilenummer 2N4261UB
Bauteilbeschribung  Silicon PNP Transistor
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Hersteller  SEMICOA [Semicoa Semiconductor]
Direct Link  http://www.semicoa.com/
Logo SEMICOA - Semicoa Semiconductor

2N4261UB Datenblatt(HTML) 1 Page - Semicoa Semiconductor

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2N4261UB
Silicon PNP Transistor
Dat a Sheet
Description
SEMICOA offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4261UBJ)
• JANTX level (2N4261UBJX)
• JANTXV level (2N4261UBJV)
• JANS level (2N4261UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact SEMICOA for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose switching transistor
• Low power
• PNP silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0014
• Reference document:
MIL-PRF-19500/511
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings
TC = 25°C unless otherwise specified
Parameter
Symbol
Rating
Unit
Collector-Emitter Voltage
VCEO
15
Volts
Collector-Base Voltage
VCBO
15
Volts
Emitter-Base Voltage
VEBO
4.5
Volts
Collector Current, Continuous
IC
30
mA
Power Dissipation, TA = 25°C
Derate linearly above 25
°C
PT
200
1.14
mW
mW/
°C
Thermal Resistance
RθJA
0.86
°C/mW
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200
°C
Copyright
© 2005
SEMICOA
Rev. E
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 1 of 2
www.SEMICOA.com


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