Datenblatt-Suchmaschine für elektronische Bauteile |
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2N3960 Datenblatt(PDF) 2 Page - Semicoa Semiconductor |
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2N3960 Datenblatt(HTML) 2 Page - Semicoa Semiconductor |
2 / 2 page Copyright 2002 Semicoa Semiconductors, Inc. Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2 www.SEMICOA.com 2N3960 Silicon NPN Transistor Data Sheet ELECTRICAL CHARACTERISTICS characteristics specified at TA = 25°C Off Characteristics Parameter Symbol Test Conditions Min Typ Max Units Collector-Emitter Breakdown Voltage V(BR)CEO IC = 10 µA 12 Volts Collector-Base Cutoff Current ICBO VCB = 20 Volts 10 µA Collector-Emitter Cutoff Current ICEX1 ICEX2 ICEX3 VCE = 10Volts, VBE = 0.4Volts VCE = 10Volts, VBE = 2 Volts VCE = 10Volts, VBE = 2 Volts, TA = 150°C 1 5 5 µA nA µA Emitter-Base Cutoff Current IEBO VEB = 4.5 Volts 10 µA On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0% Parameter Symbol Test Conditions Min Typ Max Units DC Current Gain hFE1 hFE2 hFE3 hFE4 IC = 1 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts IC = 30 mA, VCE = 1 Volts IC = 10 mA, VCE = 1 Volts TA = -55°C 40 60 30 30 300 Base-Emitter Voltage VBE1 VBE2 VCE = 1 Volts, IC = 1 mA VCE = 1 Volts, IC = 30 mA 0.8 1.0 Volts Collector-Emitter Saturation Voltage VCEsat1 VCEsat2 IC = 1 mA, IB = 0.1 mA IC = 30 mA, IB = 3 mA 0.2 0.3 Volts Dynamic Characteristics Parameter Symbol Test Conditions Min Typ Max Units Magnitude – Common Emitter, Short Circuit Forward Current Transfer Ratio |hFE|1 |hFE|2 |hFE|3 f = 100 MHz VCE = 4 Volts, IC = 5 mA, VCE = 4 Volts, IC = 10 mA, VCE = 4 Volts, IC = 30 mA, 13 14 12 Open Circuit Output Capacitance COBO VCB = 4 Volts, IE = 0 mA, 100 kHZ < f < 1 MHz 2.5 pF Open Circuit Input Capacitance CIBO VEB = 0.5 Volts, IC = 0 mA, 100 kHZ < f < 1 MHz 2.5 pF |
Ähnliche Teilenummer - 2N3960_02 |
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Ähnliche Beschreibung - 2N3960_02 |
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