Datenblatt-Suchmaschine für elektronische Bauteile |
|
STGP19NC60WD Datenblatt(PDF) 4 Page - STMicroelectronics |
|
STGP19NC60WD Datenblatt(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STGP19NC60WD - STGW19NC60WD 4/15 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Static Symbol Parameter Test conditions Min. Typ. Max. Unit VBR(CES) Collector-emitter breakdown voltage IC= 1mA, VGE= 0 600 V VCE(sat) Collector-emitter saturation voltage VGE= 15V, IC= 12A VGE= 15V, IC=12A,Tc=125°C 2.1 1.8 2.5 V V VGE(th) Gate threshold voltage VCE= VGE, IC= 250 µA 3.75 5.75 V ICES Collector cut-off current (VGE = 0) VCE= Max rating,TC= 25°C VCE= Max rating,TC= 125°C 150 1 µA mA IGES Gate-emitter leakage current (VCE = 0) VGE= ±20V, VCE= 0 ±100 nA gfs Forward transconductance VCE = 15V, IC= 12A 10 S Table 4. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Coes Cres Input capacitance Output capacitance Reverse transfer capacitance VCE = 25V, f = 1MHz, VGE = 0 1180 130 26 pF pF pF Qg Qge Qgc Total gate charge Gate-emitter charge Gate-collector charge VCE = 390V, IC = 5A, VGE = 15V, Figure 16 53 10 21 nC nC nC |
Ähnliche Teilenummer - STGP19NC60WD |
|
Ähnliche Beschreibung - STGP19NC60WD |
|
|
Link URL |
Privatsphäre und Datenschutz |
ALLDATASHEETDE.COM |
War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |