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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7809AVPBF Datenblatt(PDF) 2 Page - International Rectifier |
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IRF7809AVPBF Datenblatt(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRF7809AVPbF 2 www.irf.com Parameter Min Typ Max Units Conditions Diode Forward V SD 1.3 V I S = 15A, VGS = 0V Voltage* Reverse Recovery Q rr 120 nC di/dt ~ 700A/µs V DS = 16V, VGS = 0V, IS = 15A Reverse Recovery Q rr(s) 150 nC di/dt = 700A/µs Charge (with Parallel (with 10BQ040) Schottky) V DS = 16V, VGS = 0V, IS = 15A Parameter Min Typ Max Units Conditions Drain-to-Source BV DSS 30 – – V V GS = 0V, ID = 250µA Breakdown Voltage Static Drain-Source R DS (on) 7.0 9.0 m Ω V GS = 4.5V, ID = 15A on Resistance Gate Threshold Voltage V GS(th) 1.0 V V DS = VGS,ID = 250µA Drain-Source Leakage I DSS 30 V DS = 24V, VGS = 0 Current* 150 µA V DS = 24V, VGS = 0, Tj = 100°C Gate-Source Leakage I GSS ±100 nA V GS = ±12V Current* Total Gate Chg Cont FET Q G 41 62 V GS=5V, ID=15A, VDS=20V Total Gate Chg Sync FET Q G 36 54 V GS = 5V, VDS< 100mV Pre-Vth Q GS1 7.0 V DS = 20V, ID = 15A Gate-Source Charge Post-Vth Q GS2 2.3 nC Gate-Source Charge Gate to Drain Charge Q GD 12 I D=15A, VDS=16V Switch Chg(Q gs2 + Qgd) Q sw 14 21 Output Charge* Q oss 30 45 V DS = 16V, VGS = 0 Gate Resistance R G 1.5 3.0 Ω Turn-on Delay Time t d (on) 14 V DD = 16V, ID = 15A Rise Time t r 36 ns V GS = 5V Turn-off Delay Time t d (off) 96 Clamped Inductive Load Fall Time t f 10 Input Capacitance C iss – 3780 – Output Capacitance C oss – 1060 – pF V DS = 16V, VGS = 0 Reverse Transfer Capacitance C rss – 130 – Electrical Characteristics Source-Drain Rating & Characteristics Current Charge Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width ≤ 400 µs; duty cycle ≤ 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Q oss
Typical values measured at V GS = 4.5V, IF = 15A. |
Ähnliche Teilenummer - IRF7809AVPBF |
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Ähnliche Beschreibung - IRF7809AVPBF |
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