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SI4833DY Datenblatt(PDF) 2 Page - Vishay Siliconix

Teilenummer SI4833DY
Bauteilbeschribung  P-Channel 30-V (D-S) MOSFET with Schottky Diode
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Hersteller  VISHAY [Vishay Siliconix]
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Si4833DY
Vishay Siliconix
www.vishay.com
S FaxBack 408-970-5600
2-2
Document Number: 70796
S-56941—Rev. B, 02-Nov-98
MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = –250 mA
–1.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V
–1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = –30 V, VGS = 0 V, TJ = 55_C
–25
mA
On-State Drain Currenta
ID(on)
VDS w –5 V, VGS = –10 V
–15
A
Drain Source On State Resistancea
rDS( )
VGS = –10 V, ID = –2.5 A
0.066
0.085
W
Drain-Source On-State Resistancea
rDS(on)
VGS = –4.5 V, ID = –1.8 A
0.125
0.180
W
Forward Transconductancea
gfs
VDS = –10 V, ID = –2.5 A
5.0
S
Diode Forward Voltagea
VSD
IS = –1.7 A, VGS = 0 V
–0.8
–1.2
V
Dynamicb
Total Gate Charge
Qg
V10 V V
10 V I
2 5 A
8.7
15
C
Gate-Source Charge
Qgs
VDS = –10 V, VGS = –10 V, ID = –2.5 A
1.9
nC
Gate-Drain Charge
Qgd
1.3
Turn-On Delay Time
td(on)
V10 V R
10
W
7
15
Rise Time
tr
VDD = –10 V, RL = 10 W
I
1 A V
10 V R
6
W
9
18
Turn-Off Delay Time
td(off)
DD
,
L
ID ^ –1 A, VGEN = –10 V, RG = 6 W
14
27
ns
Fall Time
tf
8
15
Source-Drain Reverse Recovery Time
trr
IF = –1.7 A, di/dt = 100 A/ms
50
80
Notes
a.
Pulse test; pulse width
v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Forward Voltage Drop
VF
IF = 1.0 A
0.45
0.5
V
Forward Voltage Drop
VF
IF = 1.0 A, TJ = 125_C
0.36
0.42
V
Mi
R
L
k
C
I
Vr = 30 V
0.004
0.100
A
Maximum Reverse Leakage Current
Irm
Vr = 30 V, TJ = 100_C
0.7
10
mA
Vr = –30 V, TJ = 125_C
3.0
20
Junction Capacitance
CT
Vr = 10 V
62
pF


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