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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BF908 Datenblatt(PDF) 5 Page - NXP Semiconductors |
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BF908 Datenblatt(HTML) 5 Page - NXP Semiconductors |
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5 / 9 page  NXP Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R Fig.4 Transfer characteristics; typical values. VDS = 8 V; Tj =25 °C. handbook, halfpage −0.6 −0.4 0 0.2 −0.2 0.4 VG1-S (V) 3 V 2 V 1.5 V 0.5 V 0 V 0.6 40 30 10 0 20 MRC281 VG2-S = 4 V 1 V ID (mA) Fig.5 Output characteristics; typical values. VG2-S = 4 V; Tj =25 °C. handbook, halfpage 048 16 30 10 0 20 MRC282 12 VDS (V) ID (mA) 0.2 V 0.1 V 0 V −0.3 V −0.2 V −0.1 V VG1-S = 0.3 V Fig.6 Forward transfer admittance as a function of drain current; typical values. VDS = 8 V; Tj =25 °C. 0 10 20 30 40 50 0 5 10 15 20 25 0.5 V 1 V 1.5 V 2 V 3 V 4 V VG2-S = 0 V Yfs (mS) ID (mA) MRC280 Fig.7 Forward transfer admittance as a function of junction temperature; typical values. 0 20 40 60 0 40 80 120 160 40 Yfs (mS) T j ( C) o MRC276 VDS = 8 V; VG2-S = 4 V; ID =15mA. Rev. 03 - 14 November 2007 5 of 9 |
Ähnliche Teilenummer - BF908 |
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Ähnliche Beschreibung - BF908 |
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