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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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BF1100R Datenblatt(PDF) 2 Page - NXP Semiconductors |
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BF1100R Datenblatt(HTML) 2 Page - NXP Semiconductors |
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2 / 15 page  NXP Semiconductors Product specification Dual-gate MOS-FETs BF1100; BF1100R FEATURES • Specially designed for use at 9 to 12 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. PINNING CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 3g2 gate 2 4g1 gate 1 Fig.1 Simplified outline (SOT143) and symbol. BF1100 marking code: %MY. handbook, halfpage 43 2 1 Top view MAM124 s,b d g 1 g 2 Fig.2 Simplified outline (SOT143R) and symbol. BF1100R marking code: %MZ. handbook, halfpage Top view MAM125 - 1 s,b d g 1 g 2 34 1 2 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 14 V ID drain current −− 30 mA Ptot total power dissipation −− 200 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance 24 28 33 mS Cig1-s input capacitance at gate 1 − 2.2 2.6 pF Crs reverse transfer capacitance f=1MHz − 25 35 fF F noise figure f = 800 MHz − 2 − dB Rev. 02 - 13 November 2007 2 of 15 |
Ähnliche Teilenummer - BF1100R |
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Ähnliche Beschreibung - BF1100R |
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