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BTA201-800E Datenblatt(PDF) 6 Page - NXP Semiconductors |
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BTA201-800E Datenblatt(HTML) 6 Page - NXP Semiconductors |
6 / 12 page BTA201_SER_B_E_ER_3 © NXP B.V. 2007. All rights reserved. Product data sheet Rev. 03 — 10 September 2007 6 of 12 NXP Semiconductors BTA201 series B, E and ER 1 A Three-quadrant triacs high commutation 6. Static characteristics Table 5. Static characteristics Tj =25 °C unless otherwise specified. Symbol Parameter Conditions BTA201-600B BTA201-800B BTA201-600E BTA201-800E BTA201-800ER Unit Min Typ Max Min Typ Max IGT gate trigger current VD =12V; IT = 0.1 A; see Figure 8 T2+ G+ - - 50 - - 10 mA T2+ G − - - 50 - - 10 mA T2 − G− - - 50 - - 10 mA IL latching current VD =12V; IGT = 0.1 A; see Figure 10 T2+ G+ - - 30 - - 12 mA T2+ G − - - 50 - - 20 mA T2 − G− - - 30 - - 12 mA IH holding current VD =12V; IGT = 0.1 A; see Figure 11 - - 30 - - 12 mA VT on-state voltage IT = 1.4 A; see Figure 9 - 1.2 1.5 - 1.2 1.5 V VGT gate trigger voltage VD =12V; IT = 0.1 A; see Figure 7 - 0.7 1.5 - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 °C 0.2 0.3 - 0.2 0.3 - V ID off-state current VD =VDRM(max); Tj = 125 °C - 0.1 0.5 - 0.1 0.5 mA |
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