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BTA201-800E Datenblatt(PDF) 6 Page - NXP Semiconductors

Teilenummer BTA201-800E
Bauteilbeschribung  1 A Three-quadrant triacs high commutation
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BTA201_SER_B_E_ER_3
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 03 — 10 September 2007
6 of 12
NXP Semiconductors
BTA201 series B, E and ER
1 A Three-quadrant triacs high commutation
6.
Static characteristics
Table 5.
Static characteristics
Tj =25 °C unless otherwise specified.
Symbol Parameter
Conditions
BTA201-600B
BTA201-800B
BTA201-600E
BTA201-800E
BTA201-800ER
Unit
Min
Typ
Max
Min
Typ
Max
IGT
gate trigger current
VD =12V; IT = 0.1 A; see
Figure 8
T2+ G+
-
-
50
-
-
10
mA
T2+ G
-
-
50
-
-
10
mA
T2
− G−
-
-
50
-
-
10
mA
IL
latching current
VD =12V; IGT = 0.1 A; see
Figure 10
T2+ G+
-
-
30
-
-
12
mA
T2+ G
-
-
50
-
-
20
mA
T2
− G−
-
-
30
-
-
12
mA
IH
holding current
VD =12V; IGT = 0.1 A; see
Figure 11
-
-
30
-
-
12
mA
VT
on-state voltage
IT = 1.4 A; see Figure 9
-
1.2
1.5
-
1.2
1.5
V
VGT
gate trigger voltage
VD =12V; IT = 0.1 A; see
Figure 7
-
0.7
1.5
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A;
Tj = 125 °C
0.2
0.3
-
0.2
0.3
-
V
ID
off-state current
VD =VDRM(max);
Tj = 125 °C
-
0.1
0.5
-
0.1
0.5
mA


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