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BTA412Y-800B Datenblatt(Datasheet) 6 Page - NXP Semiconductors

Teile-Nr. BTA412Y-800B
Beschreibung  12 A Three-quadrant triacs, insulated, high commutation, high temperature
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Hersteller  NXP [NXP Semiconductors]
Homepage  http://www.nxp.com
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BTA412Y_SER_B_C_1
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 October 2007
6 of 12
NXP Semiconductors
BTA412Y series B and C
12 A 3-quadrant triacs, insulated, high commutation, high temperature
7.
Static characteristics
Table 6.
Static characteristics
Tj =25 °C unless otherwise specified.
Symbol Parameter
Conditions
BTA412Y-600B
BTA412Y-800B
BTA412Y-600C
BTA412Y-800C
Unit
Min
Typ
Max
Min
Typ
Max
IGT
gate trigger
current
VD =12V; IT = 0.1 A; see Figure 8
T2+ G+
2
-
50
2
-
35
mA
T2+ G
2
-
50
2
-
35
mA
T2
− G−
2
-
50
2
-
35
mA
IL
latching current VD =12V; IGT = 0.1 A; see Figure 10
T2+ G+
-
-
60
-
-
50
mA
T2+ G
--90
--60
mA
T2
− G−
--60
--50
mA
IH
holding current
VD =12V; IGT = 0.1 A; see Figure 11
--60
--35
mA
VT
on-state
voltage
IT = 18 A; see Figure 9
-
1.3
1.5
-
1.3
1.5
V
VGT
gate trigger
voltage
VD =12V; IT = 0.1 A; see Figure 7
-
0.8
1.5
-
0.8
1.5
V
VD = 400 V; IT = 0.1 A; Tj = 150 °C
0.25
0.4
-
0.25
0.4
-
V
ID
off-state current VD =VDRM(max); Tj = 125 °C
-
0.1
0.5
-
0.1
0.5
mA
VD =VDRM(max); Tj = 150 °C
-
0.4
2
-
0.4
2
mA




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