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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7303QPBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF7303QPBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 9 page  HEXFET® Power MOSFET Description IRF7303QPbF D1 D1 D2 D2 G1 S2 G2 S1 Top View 8 1 2 3 4 5 6 7 Parameter Max. Units ID @ TA = 25°C 10 Sec. Pulsed Drain Current, VGS @ 10V 5.3 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 4.9 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 3.9 IDM Pulsed Drain Current 20 PD @TA = 25°C Power Dissipation 2.0 W Linear Derating Factor 0.016 W/°C VGS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt 5.0 V/ns TJ,TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings A VDSS = 30V RDS(on) = 0.050Ω 07/23/07 Thermal Resistance Ratings Parameter Typ. Max. Units RθJA Maximum Junction-to-Ambient 62.5 °C/W l Advanced Process Technology l Ultra Low On-Resistance l Dual N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Automotive [Q101] Qualified l Lead-Free Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. SO-8 www.irf.com 1 PD - 96103 |
Ähnliche Teilenummer - IRF7303QPBF |
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Ähnliche Beschreibung - IRF7303QPBF |
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