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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF8707PBF Datenblatt(PDF) 1 Page - International Rectifier |
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IRF8707PBF Datenblatt(HTML) 1 Page - International Rectifier |
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1 / 9 page  www.irf.com 1 10/24/07 IRF8707PbF HEXFET® Power MOSFET Notes through
are on page 9 Benefits l Very Low Gate Charge l Very Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rating l 100% tested for Rg l Lead-Free Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Top View 8 1 2 3 4 5 6 7 D D D D G S A S S A SO-8 VDSS RDS(on) max Qg 30V 11.9m:@VGS = 10V 6.2nC Description The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for notebook and Netcom applications. Absolute Maximum Ratings Parameter Units VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage ID @ TA = 25°C Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current c PD @TA = 25°C Power Dissipation PD @TA = 70°C Power Dissipation Linear Derating Factor W/°C TJ Operating Junction and TSTG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units RθJL Junction-to-Drain Lead g ––– 20 RθJA Junction-to-Ambient fg ––– 50 °C/W V A W °C Max. 11 9.1 88 ± 20 30 -55 to + 150 2.5 0.02 1.6 PD - 96118A |
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Ähnliche Beschreibung - IRF8707PBF |
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