Datenblatt-Suchmaschine für elektronische Bauteile |
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TPCF8103 Datenblatt(PDF) 1 Page - Toshiba Semiconductor |
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TPCF8103 Datenblatt(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TPCF8103 2006-11-16 1 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8103 Notebook PC Applications Portable Equipment Applications • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7S (typ.) • Low leakage current: IDSS = -10 μA (max) (VDS = -20 V) • Enhancement-model: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200μA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Drain-gate voltage (RGS = 20 kΩ) VDGR -20 V Gate-source voltage VGSS ±8 V DC (Note 1) ID -2.7 Drain current Pulse (Note 1) IDP -10.8 A Drain power dissipation (t = 5 s) (Note 2a) PD 2.5 W Drain power dissipation (t = 5 s) (Note 2b) PD 0.7 W Single pulse avalanche energy (Note 3) EAS 1.2 mJ Avalanche current IAR -1.35 A Repetitive avalanche energy (Note 4) EAR 0.25 mJ Channel temperature Tch 150 °C Storage temperature range Tstg -55~150 °C Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic sensitive device. Please handle with caution. Unit: mm JEDEC ― JEITA ― TOSHIBA 2-3U1A Weight: 0.011 g (typ.) Circuit Configuration 8 6 1 2 3 7 5 4 |
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