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TPCF8103 Datenblatt(PDF) 1 Page - Toshiba Semiconductor

Teilenummer TPCF8103
Bauteilbeschribung  TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

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TPCF8103
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8103
Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 4.7S (typ.)
• Low leakage current: IDSS = -10 μA (max) (VDS = -20 V)
• Enhancement-model: Vth = -0.5 to -1.2 V
(VDS = -10 V, ID = -200μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
-20
V
Gate-source voltage
VGSS
±8
V
DC
(Note 1)
ID
-2.7
Drain current
Pulse
(Note 1)
IDP
-10.8
A
Drain power dissipation
(t
= 5 s)
(Note 2a)
PD
2.5
W
Drain power dissipation
(t
= 5 s)
(Note 2b)
PD
0.7
W
Single pulse avalanche energy (Note 3)
EAS
1.2
mJ
Avalanche current
IAR
-1.35
A
Repetitive avalanche energy
(Note 4)
EAR
0.25
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55~150
°C
Note: For (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5), please refer to the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
TOSHIBA
2-3U1A
Weight: 0.011 g (typ.)
Circuit Configuration
8
6
1
2
3
7
5
4


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