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TPCF8201 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer TPCF8201
Bauteilbeschribung  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8201 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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TPCF8201
2007-01-16
2
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
92.6
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
111.6
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
235.8
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
378.8
°C/W
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values are shown for a single device.
(During single-device operation, power is only applied to one device.)
b) The power dissipation and thermal resistance values are shown for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = 16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = 1.5 A
Note 5: Repetitive rating: Pulse width limited by maximum channel temperature
Note 6: “●” on the lower left of the marking indicates Pin 1.
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(a)
25.4
Part No.
(or abbreviation code)
F4A
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month)
Lot No.
Pin #1
Lot code
(year)
Product-specific code


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