Datenblatt-Suchmaschine für elektronische Bauteile |
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TPCF8301 Datenblatt(PDF) 3 Page - Toshiba Semiconductor |
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TPCF8301 Datenblatt(HTML) 3 Page - Toshiba Semiconductor |
3 / 7 page TPCF8301 2006-11-16 3 Marking (Note 6) Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) Note 3: a) The power dissipation and thermal resistance values are shown for a single device (During single-device operation, power is only applied to one device.). b) The power dissipation and thermal resistance values are shown for a single device (During dual operation, power is evenly applied to both devices.). Note 4: VDD = −16 V, Tch = 25°C (initial), L = 0.5 mH, RG = 25 Ω, IAR = −1.35 A Note 5: Repetitive rating: Pulse width limited by maximum channel temperature. Note 6: A dot on the lower left of the marking indicates Pin 1 FR-4 25.4 × 25.4 × 0.8 (unit: mm) (b) FR-4 25.4 × 25.4 × 0.8 (unit: mm) (a) 25.4 Part No. (or abbreviation code) F3C A line indicates lead (Pb)-free package or lead (Pb)-free finish. Lot code (month) Lot No. Pin #1 Lot code (year) Product-specific code |
Ähnliche Teilenummer - TPCF8301_07 |
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Ähnliche Beschreibung - TPCF8301_07 |
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