Datenblatt-Suchmaschine für elektronische Bauteile |
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TPCF8303 Datenblatt(PDF) 4 Page - Toshiba Semiconductor |
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TPCF8303 Datenblatt(HTML) 4 Page - Toshiba Semiconductor |
4 / 7 page TPCF8303 2006-11-16 4 Drain current ID (A) RDS (ON) – ID 10 -0.1 -1 -10 100 1000 Gate-source voltage VGS (V) VDS – VGS 0 -0.4 -0.6 -0.8 -1.0 0 -2 -4 -6 -8 -0.2 Drain-source voltage VDS (V) ID – VDS -5 -4 -2 -1 0 0 -0.2 -0.4 -0.6 -0.8 -1.0 -3 Drain-source voltage VDS (V) ID – VDS -8 -6 -4 -2 0 -10 0 -0.4 -0.8 -2.0 -1.2 -1.6 Drain current ID (A) ⎪Yfs⎪ – ID 0.1 10 100 -0.1 -1 -10 1 -3.0 VGS = -1.4 -1.6 -1.8 -2.5 -4.5 -2.0 -5 Common source Ta = 25°C Pulse Test -3.5 -4.0 -6 Common source Ta = 25°C Pulse Test -1.6 -1.8 -2.0 -3.0 -5 VGS = -1.4 V -2.2 -2.5 -3.5 -4.5 -4.0 Ta = −55°C 25 100 Common source VDS = -10 V Pulse Test Gate-source voltage VGS (V) ID – VGS 0 0 -1 -2 -3 -1 -6 -2 -3 -4 -5 Common source Ta = 25℃ Pulse Test ID = -3A -1.5 -0.75 Common Source VDS = -10 V Pulse Test 25 100 Ta = −55°C Common Source Ta = 25°C Pulse Test VGS = -1.8V -2.5 -4.5 |
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Ähnliche Beschreibung - TPCF8303 |
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