TPCF8303 datasheet(5/7 Pages) TOSHIBA

Teilenummer	TPCF8303

Bauteilbeschribung	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)

Download	7 Pages

Scroll/Zoom	100%

Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

Logo

5 / 7 page

TPCF8303

2006-11-16

5

VGS = -1.8V

ID = -3A

VGS = -2.5V

VGS = -4.5V

-1.5A

-0.75A

ID = -3A

-0.75A

-1.5A

ID =-0.75A

-3A,-1.5A

Ambient temperature Ta (°C)

PD – Ta

Ambient temperature Ta (°C)

Vth – Ta

0

-0.4

-0.8

-1.2

-2.0

−80

−40

0

40

80

120

160

-1.6

Drain-source voltage VDS (V)

IDR – VDS

0

-0.1

0.2

-0.3

-0.5

-1

-3

-5

-10

0.6

0.8

1.2

0.4

1.0

2.0

0.8

0

40

80

120

160

0.4

1.2

1.6

Device mounted on a glass-epoxy board (a) (Note 2a)

(1)Single-device operation (Note 3a)

(2)Single-device value at dual operation (Note 3b)

Device mounted on a glass-epoxy board (b) (Note 2b)

(3)Single-device operation (Note 3a)

(4)Single-device value at dual operation (Note 3b)

ｔ＝

5S

(1)

(2)

(3)

(4)

Total gate charge Qg (nC)

Dynamic input / output

characteristics

-5

-50

0

4

8

12

16

-20

-8

0

-12

-16

-10

-4

0

-6

-8

-4

-2

Common source

ID = -3 A

Ta

= 25°C

Pulse Test

VDD = -16V

VDS

-8

-4

-16

-8

VDD=-4V

VGS

160

−40

0

40

80

120

−80

160

120

80

40

0

Ambient temperature Ta (°C)

RDS (ON) – Ta

200

240

Common Source

Ta

= 25°C

Pulse Test

VGS = 0 V

-1.0

-2.5

-4.5

-1.8

-0.1

10

100

1000

10000

-1

-3

-10

-30

-100

Capacitance – VDS

Drain-source voltage VDS (V)

1

Common Source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Ciss

Coss

Crss

Common Source

VDS = -10 V

ID = -200μA

Pulse Test

Common Source

Pulse Test

Ähnliche Beschreibung - TPCF8303

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Toshiba Semiconductor	TPC8111	399Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
	TPC8113	232Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
	TPCS8105	270Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
	TPCF8302	273Kb / 7P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
	TPCF8304	260Kb / 7P	TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
	TPCF8303	118Kb / 4P	TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
	TPCP8402	162Kb / 6P	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
	TPCP8402	304Kb / 11P	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
	TPCF8402	274Kb / 11P	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
	TPC8026	207Kb / 7P	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS IV) 2009-09-29

More results

TPCF8303 Datenblatt(PDF) 5 Page - Toshiba Semiconductor

TPCF8303 Datenblatt(HTML) 5 Page - Toshiba Semiconductor

Ähnliche Teilenummer - TPCF8303

Ähnliche Beschreibung - TPCF8303

Html Pages

1 2 3 4 5 6 7

Datenblatt Download

Link URL