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TPCF8304 Datenblatt(PDF) 2 Page - Toshiba Semiconductor

Teilenummer TPCF8304
Bauteilbeschribung  TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOS IV)
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TPCF8304 Datenblatt(HTML) 2 Page - Toshiba Semiconductor

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TPCF8304
2006-11-17
2
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Single-device operation
(Note 3a)
Rth (ch-a) (1)
92.6
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2a) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
111.6
°C/W
Single-device operation
(Note 3a)
Rth (ch-a) (1)
235.8
Thermal resistance,
channel to ambient
(t
= 5 s)
(Note 2b) Single-device value at
dual operation (Note 3b)
Rth (ch-a) (2)
378.8
°C/W
Marking (Note 6)
Note 1:
Ensure that the channel temperature does not exceed 150℃.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
Note 3: a) The power dissipation and thermal resistance values shown are for a single device.
(During single-device operation, power is applied to one device only.)
b) The power dissipation and thermal resistance values shown are for a single device.
(During dual operation, power is evenly applied to both devices.)
Note 4: VDD = -24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = -1.6 A
Note 5: Repetitive rating; pulse width limited by max channel temperature
Note 6: ● to the lower left of the Part No. marking indicates Pin 1.
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4
× 25.4 × 0.8
(Unit: mm)
(a)
25.4
Part No.
(or abbreviation code)
F5D
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
Lot code (month)
Lot No.
Pin #1
Lot code
(year)
Product-specific code


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