TPCM8001-H datasheet(2/7 Pages) TOSHIBA

Teilenummer	TPCM8001-H

Bauteilbeschribung	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)

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Hersteller	TOSHIBA [Toshiba Semiconductor]

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TPCM8001-H

2006-11-16

2

Thermal Characteristics

Characteristic

Symbol

Max

Unit

Thermal resistance, channel to case

(Tc=25

°C)

Rth (ch-c)

4.17

°C/W

Thermal resistance, channel to ambient

(t

= 10 s)

(Note 2a)

Rth (ch-a)

54.3

°C/W

Thermal resistance, channel to ambient

(t

= 10 s)

(Note 2b)

Rth (ch-a)

125

°C/W

Marking (Note 5)

Note 1: The channel temperature should not exceed 150°C during use.

Note 2: (a) Device mounted on a glass-epoxy board (a)

(b) Device mounted on a glass-epoxy board (b)

Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.2 mH, RG = 25 Ω, IAR = 20 A

Note 4: Repetitive rating: pulse width limited by max channel temperature

Note 5:

• on the lower left of the marking indicates Pin 1.

(a)

FR-4

25.4

× 25.4 × 0.8

(Unit: mm)

(b)

FR-4

25.4

× 25.4 × 0.8

(Unit: mm)

* Weekly code: (Three digits)

Week of manufacture

(01 for the first week of the year, continuing up to 52 or 53)

Year of manufacture

(The last digit of the calendar year)

※

M8001

H

Lot No.

Part No. (or abbreviation code)

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