TPCP8202 datasheet(5/7 Pages) TOSHIBA

Teilenummer	TPCP8202

Bauteilbeschribung	TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSIV)

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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5 / 7 page

TPCP8202

2007-01-16

5

Ambient temperature Ta (°C)

RDS (ON) – Ta

Drain

−source voltage VDS (V)

IDR – VDS

Drain

−source voltage VDS (V)

C – VDS

Ambient temperature Ta (°C)

Vth – Ta

Ambient temperature Ta (°C)

PD – Ta

0

−80

−40

0

40

80

120

160

20

30

40

50

VGS = 2.5 V

4.5 V

4.0 V

ID = 1.4,2.8,5.5 A

5.5 A

ID = 1.4 A

2.8 A

Common source

Single Pulse test

0.1

0

1

10

− 0.2

− 0.4

− 0.6

− 0.8

− 1

Common source

Ta

= 25°C

Single Pulse test

VGS = 0 V

1

2

4

10

0.1

1

10

100

1000

10000

Common source

VGS = 0 V

f

= 1 MHz

Ta

= 25°C

Ciss

Coss

Crss

0.0

−80

−40

0

40

80

120

160

0.4

0.8

1.2

1.6

Common source

VDS = 10 V

ID = 0.2 mA

Pulse test

0

0.5

1.0

1.5

2.0

0

40

80

120

160

(1)

(2)

(3)

(4)

Device mounted on a glass-epoxy board (a)

(Note 2a)

(1) Single-device operation

(Note 3a)

(2) Single-device value at dual operation

(Note 3b)

Device mounted on a glass-epoxy board (b)

(Note 2b)

(3) Single-device operation

(Note 3a)

(4) Single-device value at dual operation

(Note 3b)

t

= 5 s

10

0.2

0.6

1.0

1.4

200

Total gate charge Qg (nC)

Dynamic input/output

characteristics

35

0

4

16

20

24

28

32

36

5

15

20

10

30

25

VDD

= 24V

Common source

ID = 5.5 A

Ta

= 25°C

Pulse test

8

12

7

0

1

3

4

2

6

5

VGS

VDS

6V

12V

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