Datenblatt-Suchmaschine für elektronische Bauteile |
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TPCS8007-H Datenblatt(PDF) 5 Page - Toshiba Semiconductor |
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TPCS8007-H Datenblatt(HTML) 5 Page - Toshiba Semiconductor |
5 / 7 page TPCS8007-H 2006-11-21 5 Ambient temperature Ta (°C) Dynamic input/output characteristics Total gate charge Qg (nC) Ambient temperature Ta (°C) RDS (ON) − Ta Drain-source voltage VDS (V) IDR − VDS Drain-source voltage VDS (V) Capacitance − VDS Vth − Ta 0.1 10 1 −0.2 0 −1.0 −0.6 −0.4 −0.8 10 3 1 VGS = 0 V Common source Ta = 25°C Pulse test 0 1 0.2 0.6 0.4 0.8 −40 −80 160 0 40 80 Common source VGS = 10 V Pulse test ID = 1.9 A 0.5 0.9 250 50 150 100 200 0 0 20 4 12 8 16 0 VDS = 160 V 80 VGS VDS Common source ID = 1.9 A Ta = 25°C Pulse test 5 10 15 40 4 1 2 3 0 −80 0 40 80 120 160 −40 Common source VDS = 10 V ID = 1mA Pulse test 10 1000 100 1 0.1 100 10 Ciss Coss Crss Common source VGS = 0 V f = 1 MHz Ta = 25°C 1 120 5 Ambient temperature Ta (°C) PD – Ta 0 0 40 80 120 160 200 0.4 0.8 1.2 1.6 2.0 (2) (1) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t= 10s |
Ähnliche Teilenummer - TPCS8007-H |
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Ähnliche Beschreibung - TPCS8007-H |
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