TPCS8210_07 datasheet(3/7 Pages) TOSHIBA

Teilenummer	TPCS8210

Bauteilbeschribung	Lithium Ion Battery Applications

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Hersteller	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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3 / 7 page

TPCS8210

2007-01-16

3

Electrical Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Gate leakage current

IGSS

VGS = ±10 V, VDS = 0 V

⎯

±10

μA

Drain cut-OFF current

IDSS

VDS = 20 V, VGS = 0 V

⎯

10

μA

V (BR) DSS

ID = 10 mA, VGS = 0 V

20

⎯

Drain-source breakdown voltage

V (BR) DSX

ID = 10 mA, VGS = −12 V

8

⎯

V

Gate threshold voltage

Vth

VDS = 10 V, ID = 200 μA

0.5

⎯

1.2

V

VGS = 2.0 V, ID = 3.5 A

⎯

34

60

VGS = 2.5 V, ID = 3.5 A

⎯

26

40

Drain-source ON resistance

RDS (ON)

VGS = 4.0 V, ID = 4.0 A

⎯

19

30

m

Ω

Forward transfer admittance

|Yfs|

VDS = 10 V, ID = 2.5 A

4.6

9.2

⎯

S

Input capacitance

Ciss

⎯

1280

⎯

Reverse transfer capacitance

Crss

⎯

130

⎯

Output capacitance

Coss

VDS = 10 V, VGS = 0 V, f = 1 MHz

⎯

150

⎯

pF

Rise time

tr

⎯

4.5

⎯

Turn-ON time

ton

⎯

11

⎯

Fall time

tf

⎯

7.3

⎯

Switching time

Turn-OFF time

toff

Duty <= 1%, tw = 10 μs

⎯

33

⎯

ns

Total gate charge

(gate-source plus gate-drain)

Qg

⎯

15

⎯

Gate-source charge 1

Qgs1

⎯

3.3

⎯

Gate-drain (“miller”) charge

Qgd

VDD ∼− 16 V, VGS = 5 V, ID = 5 A

⎯

3.5

⎯

nC

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics

Symbol

Test Condition

Min

Typ.

Max

Unit

Drain reverse current

Pulse (Note 1)

IDRP

⎯

20

A

Forward voltage (diode)

VDSF

IDR = 5 A, VGS = 0 V

⎯

−1.2

V

VDD ∼− 10 V

0 V

VGS

5 V

ID = 2.5 A

VOUT

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