Datenblatt-Suchmaschine für elektronische Bauteile |
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TPCS8303 Datenblatt(PDF) 6 Page - Toshiba Semiconductor |
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TPCS8303 Datenblatt(HTML) 6 Page - Toshiba Semiconductor |
6 / 7 page TPCS8303 2006-11-16 6 rth − tw Pulse width tw (s) Drain −source voltage VDS (V) Safe operating area −0.1 −1 −10 −100 −0.1 −1 −10 −100 ID max (Pulse) * 10 ms * 1 ms * VDSS max 0.001 0.01 0.1 1 10 100 1000 (1) (2) (3) (4) 0.1 1 0.3 0.5 3 5 10 30 50 100 300 1000 500 * Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. Device mounted on a glass-epoxy board (a) (Note 2a) (1) Single-device operation (Note 3a) (2) Single-device value at dual operation (Note 3b) Device mounted on a glass-epoxy board (b) (Note 2b) (3) Single-device operation (Note 3a) (4) Single-device value at dual operation (Note 3b) t = 10 s Single-device value at dual operation (Note 3b) |
Ähnliche Teilenummer - TPCS8303 |
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Ähnliche Beschreibung - TPCS8303 |
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