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2SC2878 Datenblatt(PDF) 1 Page - Toshiba Semiconductor

Teilenummer 2SC2878
Bauteilbeschribung  Silicon NPN Epitaxial Type For Muting and Switching Applications
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Hersteller  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SC2878 Datenblatt(HTML) 1 Page - Toshiba Semiconductor

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2SC2878
2007-11-01
1
TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC2878
For Muting and Switching Applications
• High emitter-base voltage: VEBO = 25 V (min)
• High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)
• Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
25
V
Collector current
IC
300
mA
Base current
IB
60
mA
Collector power dissipation
PC
400
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
−55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Collector cut-off current
ICBO
VCB = 50 V, IE = 0
0.1
μA
Emitter cut-off current
IEBO
VEB = 25 V, IC = 0
0.1
μA
DC current gain
hFE
(Note)
VCE = 2 V, IC = 4 mA
200
1200
Collector-emitter saturation voltage
VCE (sat)
IC = 30 mA, IB = 3 mA
0.042
0.1
V
Base-emitter voltage
VBE
VCE = 2 V, IC = 4 mA
0.61
V
Transition frequency
fT
VCE = 6 V, IC = 4 mA
30
MHz
Collector output capacitance
Cob
VCB = 10 V, IE = 0, f = 1 MHz
4.8
7
pF
Turn-on time
ton
160
Storage time
tstg
500
Switching time
Fall time
tf
Duty cycle <= 2%
130
ns
Note: hFE classification A: 200~700, B: 350~1200
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1B
Weight: 0.21 g (typ.)


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